Power Transistor NPN - Low Saturation Transistor Chip
Description
PROCESS
Power Transistor
CP309
NPN - Low Saturation Transistor Chip
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 6,285 PRINCIPAL DEVICE TYPES CMPT3090L CXT3090L CZT3090L CMXT3090L EPITAXIAL PLANAR 41.3 x 41.3 MILS 9.0 MILS 9.4...
