( DataSheet : www.DataSheet4U.com )
PROCESS
Small Signal Transistor
CP221
Central
TM
NPN- High Voltage Darlington ...
( DataSheet : www.DataSheet4U.com )
PROCESS
Small Signal Transistor
CP221
Central
TM
NPN- High
Voltage Darlington Transistor Chip
Semiconductor Corp.
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 7,290 PRINCIPAL DEVICE TYPES CZT2000 EPITAXIAL BASE 39.5 X 39.5 MILS 9.8 MILS 3.9 x 5.1 MILS 7.9 x 3.9 MILS Al - 24,000Å Au - 12,000Å
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R1 (1-August 2002)
www.DataSheet4U.com
Central
TM
PROCESS
CP221
Semiconductor Corp.
Typical Electrical Characteristics
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R1 (1-August 2002)
...
