CMXT2207

CMXT2207 SURFACE MOUNT DUAL COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT2207 type is a dual complementary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, and designed for small signal general purpose and switching applications. MARKING CODE: X07 SOT-26 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance NPN SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 75 40 6.0 600 350 -65 to +150 357 PNP 60 60 5.0 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise NPN SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=60V 10 ICBO VCB=50V ICBO VCB=60V, TA=125°C 10 ICBO VCB=50V, TA=125°C IEBO VEB=3.0V 10 ICEV VCE=60V, VEB=3.0V 10 ICEV VCE=30V, VBE=0.5V BVCBO IC=10μA 75 BVCEO IC=10mA 40 BVEBO IE=10μA 6.0 VCE(SAT) IC=150mA, IB=15mA 0.3 VCE(SAT) IC=500mA, IB=50mA 1.0 VBE(SAT) IC=150mA, IB=15mA 0.6 1.2 VBE(SAT) IC=500mA, IB=50mA 2.0 hFE VCE=10V, IC=0.1mA 35 hFE VCE=10V, IC=1.0mA 50 hFE VCE=10V, IC=10mA 75 hFE VCE=10V, IC=150mA 100 300 hFE VCE=1.0V, IC=150mA 50 hFE VCE=10V, IC=500mA 40 fT VCE=20V, IC=20mA, f=100MHz 300 fT VCE=20V, IC=50mA, f=100MHz - noted) PNP MIN MAX 10 10 50 60 60 5.0 0.4 1.6 1.3 2.6 75 100 100 100 300 50 200 - UNITS nA nA μA μA nA nA nA V V V V V V V ...