Schottky Barrier Diode
CMS10I30A
1. Applications
• Secondary Rectification in Switching Regulators • Reverse-Current Pro...
Schottky Barrier Diode
CMS10I30A
1. Applications
Secondary Rectification in Switching Regulators Reverse-Current Protection in Mobile Devices
2. Features
(1) Peak forward
voltage: VFM = 0.36 V (max) @IFM = 1 A (2) Average forward current: IF(AV) = 1 A (3) Repetitive peak reverse
voltage: VRRM = 30 V (4) Small, thin package suitable for high-density board assembly
Toshiba Nickname: M-FLATTM
3. Packaging and Internal Circuit
CMS10I30A
1: Anode 2: Cathode
3-4E1S
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Repetitive peak reverse
voltage
VRRM
30 V
Average forward current
IF(AV) (Note 1)
1
A
Non-repetitive peak forward surge current
IFSM (Note 2)
30
Junction temperature
Tj 150
Storage temperature
Tstg -55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Tℓ = 130 , square wave (α = 180°), VR = 15 V Note 2: f = 50 Hz, half-sine w...