CMBTA06

www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transistor Marking CMBTA05 = 1H CMBTA06 = 1G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) VCBO Collector–emitter voltage (open base) VCEO Emitter–base voltage (open collector) VEBO Collector current (d.c.) IC Total power dissipation up to Tamb = 25 °C Ptot D.C. current gain hFE IC = 100 mA; VCE = 1 V Transition frequency at f = 100 MHz fT IC = 10 mA; VCE = 2 V Collector–emitter saturation voltage VCEsat IC = 100 mA; IB = 10 mA CMBT A05 max. 60 max. 60 max. max. max. min. min. max. A06 80 V 80 V V mA mW 4 500 250 100 100 0.25 MHz V Continental Device India Limited Data Sheet Page 1 of 3 www.datasheet4u.com CMBTA05 CMBTA06 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) VCBO Collector–emitter voltage (open base) VCEO Emitter–base voltage (open collector) VEBO Collector current (d.c.) IC Total power dissipation up to Tamb = 25 °C Ptot Storage temperature Tstg Junction temperature Tj THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth t–s + Rth s–a) + Tamb Thermal resistance from junction to ambient max. max. max. max. max. max. max. 60 60 80 V 80 V 4 V 500 mA 250 mW –55 to +150 °C 150 °C Rth j–a = 5...