CMBT857

www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR PIN CONFIGURATION (PNP) 1 = BASE 2 = EMITTER 3 = COLLECTOR CMBT857 SOT23 MARKING: AS BELOW 3 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT V V V mA mW deg C deg C MAX 100 100 500 0.30 1.0 20 UNIT V nA nA VCBO 60 Collector -Base Voltage VCEO 50 Collector -Emitter Voltage VEBO 6.0 Emitter Base Voltage IC 200 Collector Current PC 200 Collector Power Dissipation Tj 125 Junction Temperature Tstg -55 to +125 Storage Temperature ELECTRICAL CHARACTERISTICS (Ta=25 deg C unless otherwise specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP VCEO IC=100uA, IB=0 50 Collector -Emitter Voltage ICBO VCB=60V, IE=0 Collector Cut off Current IEBO VEB=6V, IC=0 Emitter Cut off Current hFE(1) IC=1mA,VCE=6V 150 DC Current Gain hFE(2) IC=0.1mA,VCE=6V 90 VCE(Sat) IC=100mA,IB=10mA Collector Emitter Saturation Voltage VBE(Sat) IC=100mA,IB=10mA Base Emitter Saturation Voltage Dynamic Characteristics ft VCE=6V,IC=10mA, 200 Transition Frequency Cob VCB=6V, IE=0 4.0 Collector Output Capacitance f=1MHz NF VCE=6V, IE=0.3mA Noise Figure f=100Hz, Rg=10kohms CLASSIFICATION E F hFE(1) 150-300 250-500 MARKING PE PF V V MHz pF dB Continental Device India Limited Data Sheet Page 1 of 3 www.datasheet4u.com SOT-23 Formed SMD Package ±0.05 2.50 SOT-23 Package Reel Information Reel specifications for W" Packing (13" reel) 14.4 MAX ± 0.02 0...