CMBT8050

www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR PIN CONFIGURATION (NPN) 1 = BASE 2 = E M ITTER 3 = COLLECTOR CMBT8050 SOT-23 Formed SMD Package 3 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Collector Dissipation @ Ta=25ºC Operating And Storage Junction Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj, Tstg VALUE 30 25 6 800 250 - 55 to +125 UNITS V V V mA mW ºC ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Cut Off Current Emitter Cut Off Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Transition Frequency Output Capacitance CLASSIFICATIONS *hFE MARKING SYMBOL VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob CMBT8050 100 - 400 05 TEST CONDITION IC=100µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=15V, IE=0 VEB=4V, IC=0 *IC=50mA, VCE=1V IC=350mA, VCE=1V IC=500mA, IB=50mA IC=500mA, IB=50mA IC=100mA, VCE=10V, f=100MHz VCB=10V, f=1MHz C 100 - 200 05C 150 20 E 280 - 400 05E MIN 30 25 6 TYP MAX UNITS V V V nA nA 100 60 50 500 400 0.5 1.2 V V MHz pF D 150 - 300 05D CMBT8050Rev_2 240502E Continental Device India Limited Data Sheet Page 1 of 3 CMBT8050 www.datasheet4u.com SOT-23 Formed SMD Package SOT-23 Formed SMD Pa...