CMBT5089

www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5088 CMBT5089 NPN SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBT5088 = 1Q CMBT5089 = 1R PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS 5088 5089 Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector current Total power dissipation up to Tamb = 25 °C Junction temperature Collector-emitter saturation voltage IC = 10 mA; IB = 1 mA D.C. current gain IC = 100 µA; VCE = 5 V Transition frequency at f = 20 MHz IC = 500 µA; VCE = 5 V *FR-5 Board = 1.0 × 0.75 × 0.062 in. VCB0 VCE0 IC Ptot* Tj VCEsat hFE max. max. max. max. max. max. 35 30 50 225 150 0.5 30 V 25 V mA mW °C V 400 1200 min. 300 max. 900 min. 50 fT MHz Continental Device India Limited Data Sheet Page 1 of 3 www.datasheet4u.com RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) VCBO Collector–emitter voltage (open base) VCEO Emitter-base voltage (open collector) VEBO Collector current (d.c.) IC Ptot* Total power dissipation up to Tamb = 25 °C Storage temperature Tstg Junction temperature Tj THERMAL RESISTANCE From junction to ambient CHARACTERISTICS Tamb = 25 °C unless otherwise specified Collector cut–off current IE = 0; VCB = 20 V IE = 0; VCB = 15V Emitter cut–off current IC ...