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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 ...
www.datasheet4u.com
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBT5088 CMBT5089
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
N–P–N transistors
Marking CMBT5088 = 1Q CMBT5089 = 1R
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
5088 5089
Collector–base
voltage (open emitter) Collector–emitter
voltage (open base) Collector current Total power dissipation up to Tamb = 25 °C Junction temperature Collector-emitter saturation
voltage IC = 10 mA; IB = 1 mA D.C. current gain IC = 100 µA; VCE = 5 V Transition frequency at f = 20 MHz IC = 500 µA; VCE = 5 V
*FR-5 Board = 1.0 × 0.75 × 0.062 in.
VCB0 VCE0 IC Ptot* Tj VCEsat hFE
max. max. max. max. max. max.
35 30 50 225 150 0.5
30 V 25 V mA mW °C V 400 1200
min. 300 max. 900 min. 50
fT
MHz
Continental Device India Limited
Data Sheet
Page 1 of 3
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RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base
voltage (open emitter) VCBO Collector–emitter
voltage (open base) VCEO Emitter-base
voltage (open collector) VEBO Collector current (d.c.) IC Ptot* Total power dissipation up to Tamb = 25 °C Storage temperature Tstg Junction temperature Tj THERMAL RESISTANCE From junction to ambient CHARACTERISTICS Tamb = 25 °C unless otherwise specified Collector cut–off current IE = 0; VCB = 20 V IE = 0; VCB = 15V Emitter cut–off current IC ...