CMBT5087

www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5087 SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Marking CMBT5087= 2Q Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current Total power dissipation at Tamb = 25°C Junction temperature D.C. current gain –IC = 100 µA; VCE = 5 V Transition frequency at f = 20 MHz IC = 500 µA; VCE = 5 V RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) *FR-5 Board = 1.0 × 0.75 × 0.062 in. VCBO VCEO VEBO IC Ptot* Tj hFE max. max. max. max. max. max. min. max. min. 50 50 3 50 225 150 250 800 V V V mA mW °C fT 40 MHz VCBO VCEO max. max. 50 V 50 V Continental Device India Limited Data Sheet Page 1 of 3 www.datasheet4u.com CMBT5087 Emitter-base voltage (open collector) Collector current (d.c.) Total power dissipation at Tamb = 25°C Storage temperature Junction temperature THERMAL RESISTANCE From junction to ambient VEBO IC Ptot* Tstg Tj max. 3 V max. 50 mA max. 225 mW -55 to +150 ° C max. 150 ° C Rth j–a 417 ° / W CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector cut-off current ICBO IE = 0; VCB = 10 V IE = 0; VCB ...