CMBT3906

Continental Device India Limited An www.datasheet4u.com ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25 °C D.C. current gain –IC = 10 mA; –VCE = 1 V Transition frequency at f = 100 MHz –IC = 10 mA; –VCE = 20 V –VCB0 –VCE0 –VEB0 –IC Ptot hFE fT max. max. max. max. max. 40 40 5 200 250 V V V mA mW 100 to 300 min. 250 MHz Continental Device India Limited Data Sheet Page 1 of 3 www.datasheet4u.com CMBT3906 RATINGS Limiting values Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25 °C Storage temperature THERMAL CHARACTERISTICS Tj = P(Rth j–t + Rth t–s + Rth s–a) + Tamb Thermal resistance from junction to ambient CHARACTERISTICS Tamb = 25 °C unless otherwise specified Collector–emitter breakdown voltage –IC = 1 mA; lB = 0 Collector–base breakdown voltage –IC = 10µA; IE = 0 Emitter–base breakdown voltage —IE = 10 µA; IC = 0 Collector cut–off current –VCE = 30 V; –VEB = 3 V Base current with reverse biased emitter junction Output capacita...