CMBT2907A

www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS CMBT2907 CMBT2907A Collector–base voltage (open emitter) –VCB0 Collector–emitter voltage (open base) –VCE0 Emitter–base voltage (open collector) –VEB0 Collector current (d.c.) –IC Total power dissipation up to Tamb = 25 °CPtot Junction temperature Tj D.C. current gain hFE –IC = 500mA; –VCE = 10V Turn–off switching time —ICon = 150 mA; –IBon = IBoff = 15 mA toff Transition frequency at f = 100 MHz fT —IC = 50 mA; –VCE = 20 V max. 60 max. 40 max. max. max. max. > < > 30 60 60 5,0 600 250 150 50 100 200 V V V mA mW °C ns MHz Continental Device India Limited Data Sheet Page 1 of 4 www.datasheet4u.com CMBT2907 CMBT2907A RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) –VCB0 Collector–emitter voltage (open base) –VCE0 Emitter–base voltage (open collector) –VEB0 Collector current (d.c.) –IC Ptot Power dissipation up to Tamb = 25 °C Storage temperature range Tstg Junction temperature Tj THERMAL RESISTANCE From junction to ambient in free air CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector cut–off current IE = 0; –...