CMBT2484

www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR PIN CONFIGURATION (NPN) 1 = BASE 2 = EMITTER 3 = COLLECTOR CMBT2484 SOT23 MARKING: 1U 3 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C) DESCRIPTION SYMBOL VCBO Collector -Base Voltage VCEO Collector -Emitter Voltage VEBO Emitter Base Voltage IC Collector Current -Continuous PD Device Dissipation FR-5 Board* Derate above 25 deg C Rth (j-a) Thermal Resistance Junction to Ambient PD Device Dissipation Alumina Substrate** Derate above 25 deg C Rth (j-a) Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Tj,Tstg *FR-5=1.0X0.75X0.062 in **Alumine=0.4x0.3x0.024 in 99.5% alumina. ELECTRICAL CHARACTERISTICS (TA=25 deg C unless otherwise noted) CHARACTERISTICS SYMBOL TEST CONDITION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Cut off Current VCEO VCBO VEBO ICBO IC=10mA, IB=O IC=10uA, IE=0 IE=10uA, IC=0 VCB=45V, IE=0 VALUE 60 60 6 50 225 1.8 556 300 2.4 417 -55 to +150 UNIT V V V mA mW mW/deg C deg C/W mW mW/deg C deg C/W deg C MIN 60 60 6.0 250 - TYP - MAX 10 10 10 800 0.35 0.95 UNIT V V V nA uA nA Emitter Cut off Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter On Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Noise Figure VCB=45V, IE=0 TA=150 deg C IEBO VEB=5V, IC=0 hFE IC=1mA, VCE=5V IC=10mA, VCE=5V...