CMBT2369

www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (d.c. value) Total power dissipation up to Tamb = 25 °C D.C. current gain IC = 10mA; VCE = 1 V IC = 100 mA; VCE = 2 V Storage time ICon = IBon = IBoff = 10 mA VCB0 VCES VCE0 IC Ptot hFE hFE ts max. max. max. max. max. 40 40 15 500 250 V V V mA mW > < 40 to 120 20 13 ns Continental Device India Limited Data Sheet Page 1 of 3 www.datasheet4u.com CMBT2369 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c. value) Total power dissipation up to Tamb = 25 °C Storage temperature Junction temperature THERMAL RESISTANCE From junction to ambient in free air VCB0 VCES VCE0 VEB0 IC Ptot Tstg Tj Rth j–a max. max. max. max. max. max. –55 to max. = 40 V 40 V 15 V 4,5 V 500 mA 250 mW 150° C 150 ° C 500 K/W CHARACTERISTICS (at TA = 25°C unless otherwise specified) Tj = 25 °C unless otherwise specified...