www.DataSheet4U.com
MITSUBISHI HVIGBT MODULES
CM400HG-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Tran...
www.DataSheet4U.com
MITSUBISHI HVIGBT MODULES
CM400HG-66H
3rd-Version HVIGBT (High
Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CM400HG-66H
q IC ................................................................... 400A q VCES ....................................................... 3300V q High Insulated Type q 1-element in a Pack q AISiC Baseplate
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
73±0.5 57±0.25 2 - M8 NUTS Dimensions in mm
29.7
2
17±0.1
(2) C
124±0.25
140±0.5
44±0.3
1
(1) E E
G C
36
E G C
CIRCUIT DIAGRAM
5 21.6±0.3 12.9±0.3
4 - φ 7 MOUNTING HOLES
16.2±0.3
screwing depth min. 4
screwing depth min. 16.5
41±0.5 22±0.3
17.4±0.3 2.8 TAB # 110, T = 0.5
5.8
48 +1.0 0
HVIGBT (High
Voltage Insulated Gate Bipolar Transistor) Modules
5±0.15
40.4±0.5
LABEL
36.2
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM400HG-66H
3rd-Version HVIGBT (High
Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
MAXIMUM RATINGS
Symbol VCES VGES IC ICM IE (Note 2) IEM(Note 2) PC (Note 3) Tj Top Tstg Viso Qpd tpsc Item Collector-emitter
voltage Gate-emitter
voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation
voltage Partial discharge Maximum short circuit pulse width VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C TC = 90°C Pulse Pulse TC = ...
