CM400DY-50H

www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM400DY-50H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400DY-50H q IC ................................................................... 400A q VCES ....................................................... 2500V q Insulated Type q 2-elements in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 57±0.25 57±0.25 4 - M8 NUTS 20 C2 E1 C2 C2 G2 E2 C1 G1 E1 E1 124±0.25 140 40 E2 CM C1 E2 E1 CIRCUIT DIAGRAM E2(C1) G1 G2 C2 6 - φ 7 MOUNTING HOLES 24.5 53.6 61.5 15 5.7 15 39.5 7.2 5 - M4 NUTS 36.3 48.8 18 38 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) 28 5 30 LABEL Mar. 2003 MITSUBISHI HVIGBT MODULES CM400DY-50H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V DC, TC = 80°C Pulse Pulse TC = 25°C, IGBT part Conditions Ratings 2500 ±20 400 800 400 800 3400 –40 ~ +150 –40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 Unit V V A A A A W °C °C V ...