CLY5

GaAs FET CLY 5 ________________________________________________________________________________________________________ Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Q62702-L90 1 G Pin Configuration 2 3 4 S D S Package 1) CLY 5 CLY 5 SOT 223 Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature Pulse peak power Total power dissipation (Ts < 80 °C) Ts: Temperature at soldering point Symbol VDS VDG VGS ID TCh Tstg PPulse Ptot Values 9 12 -6 1.2 150 -55...+150 9 2 Unit V V V A °C °C W W Thermal Resistance Channel-soldering point RthChS ≤35 K/W 1) Dimensions see chapter Package Outlines Siemens Aktiengesellschaft pg. 1/8 17.12.96 HL EH PD21 GaAs FET Electrical characteristics (TA = 25°C , unless otherwise specified) Characteristics Drain-source saturation current VDS = 3 V VGS = 0 V CLY 5 typ 800 10 5 -2.8 11.0 max 1200 100 20 -1.8 Unit mA µA µA V dB ________________________________________________________________________________________________________ Symbol min 600 -3.8 10.5 IDSS ID IG VGS(p) G Drain-source pinch-off current VDS = 3 V VGS = -3.8 V Gate pinch-off current VDS = 3 V VGS = -3.8 V Pinch-off Voltag...