Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002 Lic# QSC/L- 000019.2
NPN S...
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002 Lic# QSC/L- 000019.2
NPN SILICON PLANAR TRANSISTORS
CL 100, A, B CK 100, A, B TO-39 Metal Can Package
CL100 And CK 100 Are Medium Power Transistors Suitable For Awide Range Of Medium
Voltage And Current Amplifier Applications. Complementary CK100, A, B
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL VCER Collector -Emitter
Voltage Collector -Base
Voltage Emitter Base
Voltage Collector Current-Continuous Power Dissipation @ Ta=25ºC Derate above 25ºC Total device dissipation @ Tc=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range VCBO VEBO ICM PD PD Tj, Tstg VALUE 50 60 5 1 800 5.33 3 20 -55 to +175 UNITS V V V A mW mW /°C W mW /°C °C
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Breakdown
Voltage BVCER * IC =10mA, IB =0 Collector Base Breakdown
Voltage Emitter Base Breakdown
Voltage Collector Leakage Current Emitter Leakage Current DC Current Gain Base Emitter On
Voltage Collector Emitter (Sat)
Voltage CLASSIFICATION HFE BVCBO BVEBO ICBO IEBO hFE * IC =100µA, IE =0 IE=100µA, IC=0 VCB=40V, IE=0 VEB=4V, IE=0 IC=150mA,VCE=10V
MIN 50 60 5
TYP
MAX
UNIT V V V
50 1 40 300 0.9 0.6
nA µA V V
VBE(on)* VCE=1V, IC=150mA, VCE(sat)* IC=150mA,IB=15mA A 40-120 B 100-300
*Pulse Condition : PW <300us, Duty Cycle < 2%
Continental Device India Limited
Data Sheet
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