CJZM718

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB3×2-8L-I Plastic-Encapsulate Transistors-MOSFETS CJZM718 N-ch MOSFET and PNP Transistor V(BR)DSS/BVCEO 20V -25V RDS(on)MAX 0.7Ω@4.5V 0.85Ω@2.5V   / ID/IC 0.5A  -3A DFNWB3×2-8L-I        &    '        FEATURE  High DC current gain  Low Threshold  Small package DFNWB3x2-8L-I  Including a CJP718 transistor and a CJ1012 MOSFET independently in a package MARKING: APPLICATION  Charging circuit  Other power management in portable equipments Equivalent Circuit C C SG 8 765 front back 1 2 34 C E BD MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter PNP Transistor VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current N-MOSFET VDS VGS ID IDM Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous Drain Current - Pulse Power Dissipation, Temperature and Thermal Resistance PD Power Dissipation R...