CHM630PAPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT CHM630PAPT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 200 Volts CURRENT 7.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. FEATURE * Small package. (TO-252A) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. CONSTRUCTION * N-Channel Enhancement .280 (7.10) .238 (6.05) .220 (5.59) .195 (4.95) (1) (3) (2) TO-252A .094 (2.40) .087 (2.20) .035 (0.89) .018 (0.45) .261 (6.63) .213 (5.40) .417 (10.6) .346 (8.80) CIRCUIT D (3) (1) G S (2) Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage TA = 25°C unless otherwise noted VGSS Gate-Source Voltage Maximum Drain Current - Continuous ID - Pulsed (Note 3) PD Maximum Power Dissipation at Tc = 25 °C TJ Operating Temperature Range TSTG Storage Temperature Range Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) .035 (0.90) .025 (0.64) .102 (2.59) .078 (1.98) 1 Gate 2 Source 3 Drain( Heat Sink ) .024 (0.61) .016 (0.40) Dimensions in inches and (millimeters) TO-252A CHM630PAPT 200 ±20 7.8 31.2 50 -55 to 150 -55 to 150 Units V V A W °C °C 50 °C/W 2006-02 RATING CHARACTE...