CES2317
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -3.1A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = ...
CES2317
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -3.1A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. RDS(ON) = 120mΩ @VGS = -2.5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package.
DS G
SOT-23
G
D S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source
Voltage Gate-Source
Voltage
VDS -30
VGS ±12
Drain Current-Continuous Drain Current-Pulsed a
ID -3.1 IDM -12
Maximum Power Dissipation
PD 1.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 100
Units V V A A W C
Units C/W
Details are subject to change without notice .
1
Rev 1 2012.Jan http://www.cetsemi.com
CES2317
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter Off Characteristics Drain-Source Breakdown
Voltage Zero Gate
Voltage Drai...
