N-Channel Enhancement Mode Field Effect Transistor
Description
N-Channel Enhancement Mode Field Effect Transistor FEATURES
60V, 42A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
CEP6060N/CEB6060N
D
D
G
G D S
S CEB SERIES TO-263(DD-PAK)
G
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RA...
