CEM73A3G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 12.5A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 1...
CEM73A3G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 12.5A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 18mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
DD D D 8 7 65
5
SO-8
1
1 234 S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source
Voltage Gate-Source
Voltage
VDS 30
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID 12.5 IDM 50
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 50
Units V V A A W C
Units C/W
Details are subject to change without notice .
1
Rev 1. 2009.July http://www.cetsemi.com
CEM73A3G
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteri...
