CEM7350
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
100V, 2.6A, RDS(ON) = 190mΩ @VGS = 10V. -100V, -2.0A, RDS(ON) = 320mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.
D1 D1 7 D2 6 D2 5
Lead free product is acquired. Surface mount Package.
8
SO-8 1
1 S1
2 G1
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