CEM6867
Dual P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-60V, -3.1A, RDS(ON) = 130mΩ @VGS = -10V. RDS(...
CEM6867
Dual P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-60V, -3.1A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 170mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D1 D1 D2 D2 876 5
SO-8
1
123 4 S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source
Voltage Gate-Source
Voltage
VDS -60
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID -3.1 IDM -12
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 62.5
Units V V A A W C
Units C/W
Details are subject to change without notice .
1
Rev 2. 2011.Mar http://www.cet-mos.com
CEM6867
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter Off Characteristics Drain-Source Breakdown
Voltage Zero Gate
Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold
Voltage Static Drain-Source On-Resistance Dynamic Characteristics c
Symbol
Test Condition
BVDSS IDSS IGSSF IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = -250µA VDS = -60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V
VGS = VDS, ID = -250µA VGS = -10V, ID = -3.1A VGS = -4.5V, ID = -2.8A
Input Capacitance Output Capacitance Reverse Transfer Capacitance Swi...