CEM6355
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-60V, -6A, RDS(ON) = 45mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
DD D D 8 7 65
SO-8
1
1 234 S SSG
ABSOLUTE MAXIMUM R...
