Dual N-Channel Enhancement Mode Field Effect Transistor
Description
CEM6188
Dual N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 7.3A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 35mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D1 D1 D2 D2 876 5
SO-8
1
123 4 S1 G1 S2 G2
ABSOL...
Chino-Excel Technology
CEM6188 PDF File
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