CEM4308
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES
40V, 5.8A, RDS(ON) = 38mΩ RDS(ON) = 50mΩ @VGS =...
CEM4308
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES
40V, 5.8A, RDS(ON) = 38mΩ RDS(ON) = 50mΩ @VGS = 10V. @VGS = 4.5V.
5
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D1 8 D1 7 D2 6 D2 5
SO-8 1
1 S1
2 G1
3 S2
4 G2
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 40 Units V V A A W C
±20
5.8 23 2.5 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units C/W
Details are subject to change without notice . 1
Rev 1. 2006.Sep http://www.cetsemi.com
CEM4308
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown
Voltage Zero Gate
Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold
Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward
Voltage b td(on) tr td(off) ...