Dual Enhancement Mode Field Effect Transistor (N and P Channel)
CEM4279
5
FEATURES
40V, 6.1A, RDS(ON) = 32mΩ @VGS = 10...
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
CEM4279
5
FEATURES
40V, 6.1A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -40V, -4.3A, RDS(ON) = 66mΩ @VGS = -10V. RDS(ON) = 105mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8
D1 8 D1 7 D2 6 D2 5
1
1 S1
2 G1
3 S2
4 G2
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 40 P-Channel -40 Units V V A A W C
±20
6.1 24 2.0 -55 to 150
±20
-4.3 -17
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units C/W
Details are subject to change without notice . 1
Rev 2. 2007.Jan http://www.cetsemi.com
CEM4279
N-Channel Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown
Voltage Zero Gate
Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold
Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate...