CEM3501L

CEM3501L P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -5A, RDS(ON) = 65mΩ @VGS = -10V. RDS(ON) = 75mΩ @VGS = -4.5V. RDS(ON) = 100mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID -5 IDM -20 Maximum Power Dissipation PD 2.5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units V V A A W C Units C/W This is preliminary information on a new product in development now Specification and data are subject to change without notice . 1 Rev 1. 2012.Mar http://www.cetsemi.com CEM3501L Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = -250µA VDS = -30V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V -30 -1 100 -100 V µA nA nA Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characterist...