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CEM3259 Datasheet

Part Number CEM3259
Manufacturers CET
Logo CET
Description Dual Enhancement Mode Field Effect Transistor
Datasheet CEM3259 DatasheetCEM3259 Datasheet (PDF)

Dual Enhancement Mode Field Effect Transistor (N and P Channel) CEM3259 5 FEATURES 30V, 7.6A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 32mΩ @VGS = 4.5V. -30V, -5.9A, RDS(ON) = 36mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 D1 8 D1 7 D2 6 D2 5 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Volta.

  CEM3259   CEM3259






Part Number CEM3258A
Manufacturers CET
Logo CET
Description Dual N-Channel MOSFET
Datasheet CEM3259 DatasheetCEM3258A Datasheet (PDF)

CEM3258A Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 7A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. D1 D1 D2 D2 876 5 SO-8 1 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20.

  CEM3259   CEM3259







Part Number CEM3258
Manufacturers CET
Logo CET
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet CEM3259 DatasheetCEM3258 Datasheet (PDF)

Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 7A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 D1 7 CEM3258 5 D2 6 D2 5 SO-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise .

  CEM3259   CEM3259







Part Number CEM3254L
Manufacturers CET
Logo CET
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet CEM3259 DatasheetCEM3254L Datasheet (PDF)

CEM3254L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 8.0A, RDS(ON) = 25mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. RDS(ON) = 35mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Contin.

  CEM3259   CEM3259







Part Number CEM3254
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CEM3259 DatasheetCEM3254 Datasheet (PDF)

CEM3254 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V ,7.8A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Curren.

  CEM3259   CEM3259







Dual Enhancement Mode Field Effect Transistor

Dual Enhancement Mode Field Effect Transistor (N and P Channel) CEM3259 5 FEATURES 30V, 7.6A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 32mΩ @VGS = 4.5V. -30V, -5.9A, RDS(ON) = 36mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 D1 8 D1 7 D2 6 D2 5 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 30 P-Channel -30 Units V V A A W C ±20 7.6 30 2.0 -55 to 150 ±20 -5.9 25 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units C/W Details are subject to change without notice . 1 Rev 2. 2007.Jan http://www.cetsemi.com CEM3259 N-Channel Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-S.


2007-05-06 : AD9236    AD9861    ADF4360-0    ADF4360-1    ADF4360-5    ADF4360-6    CEA6861    CEG8205    CEG8205A    CEH2311   


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