N-Channel Enhancement Mode Field Effect Transistor
Description
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 12A, RDS(ON) = 10.5mΩ @VGS = 10V. RDS(ON) = 15.0mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D 8
CEM3082
D 7
D 6
D 5
SO-8 1
1 S
2 S
3 S
4 G
ABSOLUTE MAXIMUM RATI...
