CEM3060
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 14A, RDS(ON) = 7.8mΩ @VGS = 10V. RDS(ON) = 11.5...
CEM3060
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 14A, RDS(ON) = 7.8mΩ @VGS = 10V. RDS(ON) = 11.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D 8 D 7 D 6 D 5
PRELIMINARY
SO-8 1
1 S
2 S
3 S
4 G
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C
±20
14 50 2.5 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units C/W
This is preliminary information on a new product in development now . Details are subject to change without notice . 1
Rev 1. 2006.April http://www.cetsemi.com
CEM3060
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown
Voltage Zero Gate
Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold
Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Sou...