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CEG2288
Dual N-Channel MOSFET
Description
CEG2288 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.2A, RDS(ON) = 24mΩ @VGS = 4.5V. RDS(ON) = 34mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 Package. G2 S2 S2 D TSSOP-8 G1 S1 S1 D D1 S1 2 S1 3 G1 4 8D 7 S2 6 S2 5 G2 ...
CET
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