CEF9060R

CEP9060R/CEB9060R CEF9060R N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP9060R CEB9060R CEF9060R VDSS 55V 55V 55V RDS(ON) 10.5mΩ 10.5mΩ 10.5mΩ ID 100A 100A 100A e @VGS 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package & TO-220F full-pak for through hole. D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 TO-220F VDS VGS ID IDM PD EAS IAS TJ,Tstg f Units V V 55 ±20 100 300 200 1.3 480 50 -55 to 175 100 300 75 0.5 480 50 e e A A W W/ C mJ A C Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 0.75 62.5 Limit 2 65 Units C/W C/W 2004.September 4 - 182 http://www.cetsemi.com CEP9060R/CEB9060R CEF9060R Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forwand Trans...