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CED62A2 Datasheet

Part Number CED62A2
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CED62A2 DatasheetCED62A2 Datasheet (PDF)

CED62A2/CEU62A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 48A, RDS(ON) = 12mΩ @VGS = 4.5V. RDS(ON) = 17mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 2.

  CED62A2   CED62A2






Part Number CED62A3
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CED62A2 DatasheetCED62A3 Datasheet (PDF)

CED62A3/CEU62A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 55A, RDS(ON) = 11.5mΩ @VGS = 10V. RDS(ON) = 16mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Dr.

  CED62A2   CED62A2







N-Channel MOSFET

CED62A2/CEU62A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 48A, RDS(ON) = 12mΩ @VGS = 4.5V. RDS(ON) = 17mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 20 Units V V A A W W/ C C ±12 48 140 48 0.38 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.6 50 Units C/W C/W Specification and data are subject to change without notice . 1 Rev 1. 2006.January http://www.cetsemi.com CED62A2/CEU62A2 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forwand Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Ga.


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