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CED540A Datasheet

Part Number CED540A
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CED540A DatasheetCED540A Datasheet (PDF)

CED540A/CEU540A N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 25A, RDS(ON) = 49mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted S.

  CED540A   CED540A






Part Number CED540N
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CED540A DatasheetCED540N Datasheet (PDF)

CED540N/CEU540N N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 25A, RDS(ON) = 53mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain .

  CED540A   CED540A







Part Number CED540L
Manufacturers Chino-Excel Technology
Logo Chino-Excel Technology
Description N-Channel MOSFET
Datasheet CED540A DatasheetCED540L Datasheet (PDF)

N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 25A, RDS(ON) = 50mΩ @VGS = 10V. RDS(ON) = 53mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED540L/CEU540L D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 2.

  CED540A   CED540A







N-Channel MOSFET

CED540A/CEU540A N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 25A, RDS(ON) = 49mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 100 Units V V A A W W/ C C ±20 25 100 68 0.45 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.2 50 Units C/W C/W Specification and data are subject to change without notice . 6 - 74 Rev .1 2006.March http://www.cetsemi.com CED540A/CEU540A Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Ch.


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