CEC8218
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 7A, RDS(ON) = 20mΩ @VGS = 4.5V. RDS(ON) = 28mΩ @VGS = 2.5V. RDS(ON) = 48mΩ @VGS = 1.8V.
Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
*1K G1
*1K G2
S1 *Typical value by design
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