CEP70N06/CEB70N06
N-Channel Enhancement Mode Field Effect Transistor FEATURES
60V, 70A, RDS(ON) = 13mΩ @VGS = 10V. Super...
CEP70N06/CEB70N06
N-Channel Enhancement Mode Field Effect Transistor FEATURES
60V, 70A, RDS(ON) = 13mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D
D
G
S CEB SERIES TO-263(DD-PAK) G
G D S
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 60
Units V V A A W W/ C mJ A C
±20
70 280 150 1.0 480 50 -55 to 175
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.0 62.5 Units C/W C/W
2004.December 4 - 142
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CEP70N06/CEB70N06
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown
Voltage Zero Gate
Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold
Voltage Static Drain-Source On-Resistance Forwand Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Cha...