CEP13N10/CEB13N10
N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 12.8A, RDS(ON) = 180mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D
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S CEB SERIES TO-263(DD-PAK) G
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CEP SERIES TO-220
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ABSOLUTE MAXIMUM RAT...
