CEP13N07/CEB13N07
N-Channel Enhancement Mode Field Effect Transistor FEATURES
70V, 13A, RDS(ON) = 125mΩ @VGS = 10V. RDS(ON) = 150mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G
S CEB SERIES TO-263(DD-PAK) G
G D S
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C u.
N-Channel MOSFET
CEP13N07/CEB13N07
N-Channel Enhancement Mode Field Effect Transistor FEATURES
70V, 13A, RDS(ON) = 125mΩ @VGS = 10V. RDS(ON) = 150mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G
S CEB SERIES TO-263(DD-PAK) G
G D S
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 70
Units V V A A W W/ C mJ A C
±20
13 52 45 0.3 85 11 -55 to 175
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3.35 62.5 Units C/W C/W
2004.November 4 - 54
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CEP13N07/CEB13N07
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off.