CEP06N5/CEB06N5
Oct. 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
500V , 6.6A , RDS(ON)=1Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.
4 4
D
G
D G
G D S
S
CEB SERIES TO-263(DD-PAK)
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS (T...
