CEP02N6/CEB02N6
4
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter DYNAMIC CHARACTERISTICS b
Input...
CEP02N6/CEB02N6
4
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter DYNAMIC CHARACTERISTICS b
Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Forward
Voltage CISS COSS CRSS
a
Symbol
Condition
Min Typ Max Unit
250 50 30 1.5
PF PF PF
VDS =25V, VGS = 0V f =1.0MHZ
4
VGS = 0V, Is =2A
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD
V
Notes a.Pulse Test:Pulse Widthś 300ijs, Duty Cycle ś 2%. b.Guaranteed by design, not subject to production testing. c. L=60mH, IAS=2.0A, VDD=50V, RG=25Ω , Starting TJ=25 C
3.0 VGS=10,9,8,7V 2.5
ID, Drain Current(A)
2.0 1.5 1.0
ID, Drain Current (A)
150 C
1
VGS=6V
VGS=5V
0.5 0 0 2 4 6 8 10 12
-55 C 25 C
1.VDS=40V 2.Pulse Test
0.1 2
4
6
8
10
VDS, Drain-to-Source
Voltage (V)
VGS, Gate-to-Source
Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
4-4
CEP02N6/CEB02N6
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
600 500
2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200
ID=1A VGS=10V
C, Capacitance (pF)
400 300 200 100 0 0 5 10 15 20 25 Coss Crss Ciss
4
VDS, Drain-to Source
Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
BVDSS, Normalized Drain-Source Breakdown
Voltage Vth, Normalized Gate-Source Threshold
Voltage
1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250ӴA
Figure 4. On-Resistance Variation with Temperature
1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 ID=250ӴA
0
25
50
75 100 125 150
Tj, Junctio...