P-Channel Enhancement Mode Field Effect Transistor
Description
CEA6861
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-60V, -2.4A, RDS(ON) = 135mΩ @VGS = -10V. RDS(ON) = 180mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package. D
D S D G SOT-89
G
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage D...
