Schottky Barrier Diode Silicon Epitaxial
CCS15S40
1. Applications
• High-Speed Switching
2. Features
(1) Small package (...
Schottky Barrier Diode Silicon Epitaxial
CCS15S40
1. Applications
High-Speed Switching
2. Features
(1) Small package (2) Low forward
voltage: VF(2) = 0.47 V (typ.)
3. Packaging and Internal Circuit
CST2C
CCS15S40
1: Cathode 2: Anode
©2015 Toshiba Corporation
1
Start of commercial production
2014-01
2015-11-13 Rev.3.0
CCS15S40
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse
voltage
VRM
40 V
Average rectified current
IO (Note 1)
1.5
A
Non-repetitive peak forward surge current
IFSM (Note 2)
5
A
Junction temperature
Tj 125
Storage temperature
Tstg
-55 to 125
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Note 2: Measured with a 10 ms pulse.
5. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics Forward
voltage
Revers...