C770A

SPCO INVERTER THYRISTOR C770 & C770A 77mm / 1800V / 60-80us Disc-type ceramic PRESSPAK package Type C770 reverse blocking thyristor is suitable for inverter applications.The silicon junction is manufactured by the proven multi-diffusion process and utilizes the exclusive involute gate structure.It is supplied in an industry accepted disc-type package , ready to mount using commercially available heat dissipators and mechanical clamping hardware. C770 ON-STATE CHARACTERISTIC On-state current , It (amperes) Blocking Voltage Code C770__ MODEL C770A__ VDRM/VRRM 10000 Process Maximum Pulsed Current Initial Tj = 125 degC 1000 -40 to +125 oC ———————————1800 Volts C770 PN C770 PS 1700 C770 PM 1600 C770 PE 1500 C770 PD 1400 Gate Drive Requirements: open circuit voltage internal impedance rise time of s.s. current minimum duration 30-40 V 10 Ω 0.5 - 1 µs 10 µs 100 0 1 2 3 4 5 6 7 8 On-state Voltage , Vt (volts) THERMAL IMPEDANCE vs. ON-TIME Zthj-c (deg C/W) 100 .01 C770 Non-Repetitive Half-Cycle Peak Surge Current & I2t Itsm (kA) I2t (amp-sq-sec) .02 w 10.E6 w w .D .001 50 5.E6 .0001 .00001 at aS 0.1 Rthj-case(dc) = .012 degC/watt he 1 10 100 1000 10000 On-Time (milliseconds) 10 1 10 SILICON POWER CORPORATION 175 GREAT VALLEY PARKWAY, MALVERN, PA 19355 USA et 4U .c 1.E6 Pulse Width - milliseconds om PG: 6.078 sh1 12/1/98 www.DataSheet4U.com SPCO LIMITING CHARCTERISTICS C770 TEST SYMBOL CONDITIONS VRRM VDRM IRRM IDRM IT(AV) ITSM VTM Tj = -40 to +125...