Ordering number:ENN6308
PNP/NPN Epitaxial Planar Silicon Transistors
2SA2015/2SC5568
DC/DC Converter Applications
Appl...
Ordering number:ENN6308
PNP/NPN Epitaxial Planar Silicon Transistors
2SA2015/2SC5568
DC/DC Converter Applications
Applications
Package Dimensions
· Relay drivers, lamp drivers, motor drivers, strobes.
Features
· Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation
voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to
be made small and slim. · High allowable power dissipation.
Specifications
( ) : 2SA2015
unit:mm 2163
[2SA2015/2SC5568]
4.5 1.6
1.5
1.0 2.5
4.25max
32 0.5 0.4
1.5 3.0
0.75
1
0.4
1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view)
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Current (Pulse) Base Current
Collector Dissipation
Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
Conditions
Mounted on a ceramic board (250mm2×0.8mm) Tc=25˚C
Ratings (–30)40 (–)30 (–)6 (–)8 (–)12 (–)1.2 1.3 3.5 150
–55 to +150
Unit V V V A A A W W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product
Output Capacitance Marking : 2SA2015 : AV 2SC5568 : FE
Symbol
Conditions
ICBO IEBO hFE
fT
Cob
VCB=(–)30V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)500mA
VCE=(–)10V, IC=(–)500mA
VCB=(–)10V, f=1MHz
Ratings min typ max
Unit
(–)0.1 µA
(–)0.1 µA
200 560
(290)
M...
