Power Transistors
2SC5505
Silicon NPN epitaxial planar type
For power amplification
9.9±0.3
Unit: mm 4.6±0.2
2.9±0.2
...
Power Transistors
2SC5505
Silicon NPN epitaxial planar type
For power amplification
9.9±0.3
Unit: mm 4.6±0.2
2.9±0.2
3.0±0.5
■ Features
High-speed switching
φ 3.2±0.1
15.0±0.5
TO-220D built-in: Excellent package with withstand
voltage 5 kV
guaranteed
■ Absolute Maximum Ratings TC = 25°C
1.4±0.2 1.6±0.2
2.6±0.1
/ Parameter
Symbol Rating
Unit
0.8±0.1
0.55±0.15
e Collector-base
voltage (Emitter open) VCBO
60
13.7±0.2 4.2±0.2
Solder Dip
V
pe) Collector-emitter
voltage (Base open) VCEO
60
V
nc d ge. ed ty Emitter-base
voltage (Collector open) VEBO
5
V
sta tinu Collector current
IC
8
A
a e cycle iscon Peak collector current
ICP
16
A
life d, d Collector power dissipation
PC
20
W
n u duct type Ta = 25°C
2.0
te tin Pro ed Junction temperature
Tj
150
°C
four ntinu Storage temperature
Tstg −55 to +150 °C
in n s followliannged disco ■ Electrical Characteristics TC = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
inc typ Collector-emitter
voltage (Base open)
c tinued ance Collector-base cutoff current (Emitter open) M is con inten Collector-emitter cutoff current (Base open)
/Dis ma Forward current transfer ratio
D tenancece type, Collector-emitter saturation
voltage
ain nan Base-emitter saturation
voltage M ainte Turn-on time d m Storage time (plane Fall time
VCEO ICBO ICEO hFE1 hFE2 VCE(sat) VBE(sat) ton tstg
tf
IC = 10 mA, IB = 0 VCB = 60 V, IE = 0 VCE = 60 V, IB = 0 VCE = 2 V, IC = 1 A VCE = 2 V, IC = 5 A IC = 5 A, IB = ...
