Ordering number:ENN6279
NPN Epitaxial Planar Silicon Transistor
2SC5502
High-Frequency Low-Noise Amplifier Applications...
Ordering number:ENN6279
NPN Epitaxial Planar Silicon Transistor
2SC5502
High-Frequency Low-Noise Amplifier Applications
Features
· Low noise : NF=1.1dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=8GHz typ.
Package Dimensions
unit:mm 2161
[2SC5502]
0.425
0.65 0.65 0.3
43
0.15 0 to 0.1
0.2
1.25 2.1
12 0.6 0.65 0.5
2.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions Mounted on a ceramic board (250mm2× 0.8mm)
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product Reverse Transfer Capacitance
ICBO IEBO hFE1 hFE2
fT Cre
* : The 2SC5502 is classified by 30mA hFE as follows :
Marking
TY
Rank
4
5
hFE
90 to 180
135 to 270
VCB=5V, IE=0 VEB=1V, IC=0 VCE=5V, IC=30mA VCE=5V, IC=70mA VCE=5V, IC=30mA VCB=5V, f=1MHz
0.7 0.9
0.425
1 : Emitter 2 : Collector 3 : Emitter 4 : Base SANYO : MCP4
Ratings 20 12 2
100 500 150 –55 to +150
Unit V V V mA
mW ˚C ˚C
Ratings min typ max
Unit
1.0 µA
10 µA
90* 270*
80
68
GHz
0.6 1.0 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of rel...