Ordering number:EN5032A
NPN Epitaxial Planar Silicon Transistor
2SC5226
VHF to UHF Wide-Band Low-Noise Amplifier Applic...
Ordering number:EN5032A
NPN Epitaxial Planar Silicon Transistor
2SC5226
VHF to UHF Wide-Band Low-Noise Amplifier Applications
Features
· Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ.
0.425
Package Dimensions
unit:mm 2059B
[2SC5226]
0.3
3
0.15
0.2
0 to 0.1
2.1 1.250
Specifications
0.425
12 0.65 0.65
2.0
0.3 0.6 0.9
1 : Base 2 : Emitter 3 : Collector SANYO : MCP
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=10V, IE=0
Emitter Cutoff Current DC Current Gain
IEBO hFE
VEB=1V, IC=0 VCE=5V, IC=20mA
Gain-Bandwidth Product
fT VCE=5V, IC=20mA
Output Capacitance
Cob VCB=10V, f=1MHz
Reverse Transfer Capacitance Forward Transfer Gain
Cre | S21e |2(1) | S21e |2(2)
VCB=10V, f=1MHz VCE=5V, IC=20mA, f=1GHz VCE=2V, IC=3mA, f=1GHz
Noise Figure
NF VCE=5V, IC=7mA, f=1GHz
* : The 2SC5226 is classified by 20mA hFE as follows : 60 3 120 90 4 180 135 5 270
Ratings 20 10 2 70
150 150 –55 to +150
Unit V V V mA
mW ˚C ˚C
Ratings min typ
60* 57 0.75 0.5 9 12 8 1.0
Marking : LN hFE rank : 3, 4, 5
max 1.0 10
270* 1.2
1.8
Unit
µA µA
GHz pF pF dB dB dB
Any and all SANYO products described or conta...