Power Transistors
2SC5223
Silicon NPN triple diffusion planar type
For high-speed switching
s Features
q High collector...
Power Transistors
2SC5223
Silicon NPN triple diffusion planar type
For high-speed switching
s Features
q High collector to base
voltage VCBO q High collector to emitter VCEO
s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 500 500 7 2.0 1.0 10 150
–55 to +150
Unit V V V A A W ˚C ˚C
s Electrical Characteristics (Ta=25˚C)
Parameter Collector cutoff current Emitter cutoff current Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage
Forward current transfer ratio
Collector to emitter saturation
voltage Base to emitter saturation
voltage
Symbol ICBO IEBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat)
Conditions VCB = 400V, IE = 0 VEB = 5V, IC = 0 IC = 100µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 5V, IC = 50mA VCE = 5V, IC = 330mA IC = 330mA, IB = 33mA IC = 330mA, IB = 33mA
2.5±0.1
7.3±0.1 1.8±0.1
6.5±0.1 5.3±0.1 4.35±0.1
Unit: mm
2.3±0.1 0.5±0.1
0.8max 1.0±0.2
0.93±0.1
1.0±0.1 0.1±0.05
0.5±0.1
2.3±0.1 4.6±0.1
0.75±0.1
123
6.5±0.2 5.35 4.35
1:Base 2:Collector 3:Emitter U Type Package
Unit: mm
5.5±0.2 1.8
13.3±0.3
2.3 2.3
0.75
0.6
123
2.3±0.1
6.0
0.5±0.1
1:Base 2:Collector 3:Emitter EIAJ:SC–63 U Type Package (Z)
min typ max Unit 100 µA 10 µA
500 V 500 V
7V 100 100
1.0 V 1.5 V
1
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